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We report on the growth and characterization of InGaAs/InP core–shell nanowires on Si–(111) substrates by metal-organic chemical vapor deposition (MOCVD). The strain at the core–shell interface induced by the large lattice mismatch between the InGaAs core and InP shell materials has strong influence on the growth behavior of the InP shell, leading to the asymmetric growth of InP shell around the InGaAs...
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