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Ag/GZO/ZnO/Pt structure resistive switching devices were fabricated by radio frequency (RF) magnetron sputtering, in which ZnO was used as a buffer layer. These devices have large ratio of high resistance state (HRS) to low resistance state (LRS), which is 2×10 3 . The storage time measurement indicates that these devices have an excellent data retention characteristic. Moreover, the operation...
A metal–semiconductor–metal photoconductive detector was fabricated on c-axis preferred oriented Ga-doped ZnO (ZnO:Ga) thin film prepared on quartz by radio-frequency magnetron sputtering. With a 10V bias, a responsivity of about 2.6A/W at 370nm was obtained in the ultraviolet region. The photocurrent increases linearly with incident power density for more than two orders of magnitude. The transient...
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