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Effect of Ga addition on physical properties of glassy As2Se3 alloys within Gax(As0.4Se0.6)100−x system (x=0–5) is studied for further improvement as rare earth ions matrix hosts. Following conventional synthesis conditions, it has been shown it is possible to introduce up to 3at.% of Ga into As2Se3 matrix without any crystallization and up to 2at.% of Ga without any changes in the properties of these...
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