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We present the utilization of δ-doping to mitigate the rise in nonlinear gain compression in highly-strained InGaAs VCSELs and compare it with unstrained and undoped active region designs. High-speed 25 Gbps operation is also demonstrated.
We demonstrate ultra-compact intra-cavity contacts fabricated with an embedded Al2O3 etch-stop, which effectively shorten the cavity length and enhance the output power of a multi-terminal VCSEL.
Both polarization switching and control over the angle between polarization states is demonstrated. A novel dual intracavity contacted vertical-cavity surface-emitting laser utilizing asymmetric current injection is tested. Large extinction ratios 21 dB and a record-low threshold current of 0.19 mA is achieved for such devices. Control over the phase offset between two polarization states is accomplished...
Output polarization is controlled by injecting current along crystalline directions. VCSELs with record-low threshold current of 0.19 mA and extinction ratio >;21dB from fit is achieved. Polarization switching is shown to be enhanced by implantation.
Novel three-terminal field-induced charge-separation lasers (FICSLs) in VCSEL form were designed and fabricated. The new gain modulation mechanism of hole-electron separation was demonstrated for the first time by applying a variable gate voltage with a constant injection current to the active region.
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