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The authors present a fully solderable, co-diffused and bi-facial PERT solar cell where the rear BSG/SiN stack acting both as dopant and passivation source reaching a mean efficiency of 20.4 %. The conductivity induced by the presence of the p+ layer at the rear reduces series resistance losses significantly by simultaneously enabling the use of lowly doped Si wafers that reduce B-O degradation while...
We present a simple industrially upscaleable process for the fabrication of bifacial n-type silicon solar cells. A process simplification is achieved by simultaneous diffusion of phosphorus back surface field (BSF) and boron emitter in one single high temperature process, the so called co-diffusion. A borosilicate glass (BSG) layer, deposited by atmospheric pressure chemical vapor deposition (APCVD)...
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