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The object of our research is to compare PSP and BSIM4 model parameters for MOSFETs before and after hot-carrier stress. The first part is using MBP software to extract the parameters of 65 nm node MOSFETs with and without hot-carriers stress. Then, comparison of MOSFET parameters based on PSP and BSIM4 models is executed. We conclude that the PSP model is more accurate than BSIM4 model.
Substrate current I SUB of an n-channel metal–oxide–semiconductor field-effect transistor (nMOSFET) depending on source/drain voltage V DS can be applied as a stress index in the hot carrier test. Usually, the substrate bias directly influences device performance, such as the threshold voltage and the source/drain current. On the other hand, the substrate biasing circuit benefits turn-on...
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