The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
This paper reports the metal-organic vapor-phase epitaxy (MOVPE) growth of ultra-thin InAlP/InGaAs heterojunctions for use as wet-etching stoppers in InP-based high electron mobility transistors (HEMTs) and as barriers in resonant tunneling diodes (RTDs). InAlP/InGaAs modulation-doped (MD) heterojunctions with high electron mobility were successfully grown. Practical wet-etching selectivity in even...
This paper presents a wideband and high power-handling single-pole four-throw (SP4T) switch IC using InGaAs/InP composite-channel (CC) HEMTs. Owing to the CC structure with an InAlP barrier, the input power for P1dB of 19.4 dBm is 6 dB higher than that of our conventional InGaAs single-channel HEMT switch, with identical wideband performance of ~40 GHz.
Metal-organic vapor-phase epitaxy (MOVPE) growth of InP was investigated by using both triethylphosphine (TEP) and phosphine (PH3) simultaneously as phosphorus sources. Excellent surface morphology was obtained at 630 and 660degC by using both TEP and phosphine simultaneously at an optimized balance even though the phosphine supply amount was drastically reduced. The regular monolayer-step array of...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.