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We proposed a resonant tunneling diode (RTD) with InAlGaAs/InP composite collector for reduction in transit delay caused by the gamma to L valley transition at the collector depletion region. Terahertz oscillators fabricated with this RTD show room-temperature fundamental oscillations of 680–770 GHz with the RTD areas of 1–1.5 square microns. Higher frequency will be possible by reducing the RTD area.
We demonstrated the operation of GaInAs/AlAs resonant tunneling diode (RTD) oscillators with high output power (100-200 μW) at frequencies of 430-460 GHz using an offset-fed slot antenna, in which the RTD was placed 45 μm from the center of a 100-μm-long antenna. The highest output power obtained in this study was 200 μW at 443 GHz for a single RTD with a peak current density of 18 mA/μm2. The output...
A fundamental oscillation up to 915 GHz was observed at room temperature in InGaAs/AlAs resonant tunneling diode integrated with planar slot antennas. By reducing the mesa area, parasitic capacitance of resonant tunneling diode was decreased. The output power was small (around a few tens nW) at present because of a small area (ap0.63 mum2) and a low available current density (ap3 mA/mum2) which is...
A fundamental oscillation of up to 831 GHz was observed at room temperature in GaInAs/AlAs resonant tunneling diodes integrated with planar slot antennas. The thickness of the collector spacer layer was optimized (20 nm) and the mesa area (<1 mum2) was reduced in order to reduce the resonant tunneling diode capacitance. Reduction in the negative differential conductance in the small mesa area was...
Fabrication and oscillation characteristics of sub-THz RTD oscillators integrated with planar horn antennas for horizontal radiation are reported. The device consists of a GaInAs/AlAs RTD, a resonator, a waveguide, and a horn antenna on a semi-insulating InP substrate. Oscillation frequency of 455 GHz and horizontal output power of ~0.6 muW were observed. The output power is small at present because...
We obtained InGaAs/AlAs double-barrier resonant tunneling diodes (DB RTDs) with very high peak current density using thin barrier and high emitter doping. The peak current density of 13 mA/mum2 with the peak/valley current ratio of 1.5 was obtained for 1.4-nm-thick barrier and emitter doping concentration of 6 times 1018cm-3. By these characteristics, oscillators with the fundamental oscillation exceeding...
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