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We examined effects of ion implantation doses, annealing temperature and time on ion-beam synthesis (IBS) of polycrystalline β-FeSi 2 using Raman spectroscopy. It was confirmed that at very low Fe concentration doses (up to 1x10 16 ions/cm 2 ), fine grains of β-FeSi 2 and a small amount of fluorite γ-FeSi 2 may precipitate after annealing at 800 o ...
We present the first evident photovoltaic responses from ion-beam synthesized (IBS) polycrystalline p-type β-FeSi 2 /n-Si(100) heterojunctions. The triple ion implantation and subsequent annealing at 800 o C provided polycrystalline continuous layers ~60-nm thick with large crystalline grains of ~10 μm. The high temperature and long annealing time were very effective in amplifying...
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