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The catalyst-free metal organic vapor phase epitaxial growth of InAs nanowires on silicon (001) substrates is investigated by using selectively grown InP/GaAs buffer layers in V-grooved trenches. A strain-driven mechanism of self-aligned 〈112〉 direction InAs nanowires growing is proposed and demonstrated by the transmission electron microscopy measurement. The morphology of InAs nanowires is tapered...
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