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With a three-dimensional thermal-electrical model, a non-uniform emitter length structure in multi-finger SiGe heterojunction bipolar transistors (HBTs) is presented to improve thermal stability. Compared with the traditional uniform emitter length design, the peak temperature of multi-finger SiGe HBT with non-uniform length is lowered. Therefore, it can operate at large current and has a higher power...
High-power SiGe HBTs with multiple emitter fingers are developed by using interdigitated structure and each emitter stripe area of 3times45 mum2. The value of collector-emitter voltage Vce is carefully selected to ensure these power devices operating at high power levels. Four-Watt RF power with maximum high power-added efficiency (PAE) of 49% and power gain(Gp) of 6.71dB is achieved when SiGe HBTs...
A feedback topology low-noise amplifier (LNA) using advanced SiGe HBT technology for application in ultra-wideband (UWB) systems is presented in this paper. The design consists of single stage topology in two feedback loops to achieve broadband gain together with low noise figure (NF) and good input and output impedance match. Using 0.35 mum SiGe HBT process, the simulated results show 11.9 dB of...
A design methodology of Darlington low noise figure (LNA) for application at ultra wide bandwidth using a resistive feedback scheme is proposed. The packaged SiGe heterojunction bipolar transistors (HBTs) BFP740 and chip type passive components were used for this direct-coupled LNA. The Darlington amplifier has high gain of 20 dB with variation of 0.5 dB over 3.1-6 GHz, which is twice of single stage...
This paper proposes the layout design of multi-finger power SiGe HBTs with non-uniform finger spacing to improve the thermal stability. Two types of 20-finger SiGe HBTs with uniform and non-uniform finger spacing are fabricated. Experimental results shown that, for the HBT with non-uniform finger spacing, the power level for thermal regression is 22.8% higher than that of the uniform one, which contributes...
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