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This paper reviews the current status of 4H-SiC RF NPN bipolar junction transistors (BJT's). Process developments including precise and uniform SiC etch and low resistance p-type ohmic contact formation on a two inch SiC wafer will be presented. The high temperature operation up to 500degC and radiation hardness up to 1.6 Mrad, as well as RF performance promising for long-pulse UHF and L-band radar...
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