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This paper reviews the current status of 4H-SiC RF NPN bipolar junction transistors (BJT's). Process developments including precise and uniform SiC etch and low resistance p-type ohmic contact formation on a two inch SiC wafer will be presented. The high temperature operation up to 500degC and radiation hardness up to 1.6 Mrad, as well as RF performance promising for long-pulse UHF and L-band radar...
In this letter, we report 4H-SiC RF bipolar junction transistors (BJTs) on an n-type 4H-SiC conductive substrate with, for the first time, RF power amplification at 1 GHz. The devices were fabricated using a double-mesa etch and interdigitated emitter-base finger design. When tested under common-base and pulsed Class AB mode at 1 GHz, the packaged devices with external matching exhibited a 10.1-dB...
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