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A 6–18 GHz, 8.1 W gallium nitride (GaN) distributed amplifier (DA) monolithic microwave integrated circuit (MMIC) is presented with compact size. To accomplish high-output power density with compact size, the last two sections of the DA consist of small-sized FETs. This approach improves the output return loss and allows the drain line lengths to be reduced thereby increasing the drain cut-off frequency...
Structural and optical properties of quantum dots fabricated using diblock copolymer lithography and selective MOCVD growth are reported. Tensile-strained (InxGa1-xAs) and compressively-strained (InAs) QDs on InP exhibit luminescence near 1.4 and 2.1 μm respectively.
We demonstrate novel detuned dual-mode laser for tunable continuous-wave terahertz generation with InGaAs-based photomixers. The beat frequency from this dual-mode multisection laser is continuously tuned from 0.30 to over 1.15 THz.
Spontaneous emission spectra of type-II InGaN/GaNAs QW light-emitting diodes are investigated using the multiband effective mass theory. These results are compared with those of conventional InGaN/GaN QW structures. In the case of a low carrier density, a type-II InGaN/InGaN/GaN QW structure shows much larger matrix element than a conventional InGaN/GaN QW structure. On the other hand, in the case...
Effects of the strain distribution on the optical gain of InGaN-AlInGaN QW light-emitting diodes (LEDs) is investigated. The amount of stress and strain in the multilayer quantum well structures are calculated taking into account the difference between crystalline parameters. Significant enhancement of optical gain is expected with the introduction of strain distribution layers.
A deep back chamber micro-electro-mechanical system (MEMS) acoustic sensor with two sacrificial layers based on surface micromachining on a GaAs substrate is presented. As it is designed to be implemented on only the front side of a substrate in order to satisfy the need for a simple monolithic integrated process, this sensor has bottom electrode anchors fabricated using the first sacrificial layer...
Optical properties of 530 nm strain-compensated InGaN/InGaN/ZnO quantum well (QW) light-emitting diodes (LEDs) using a ZnO substrate are investigated using the multiband effective mass theory. These results are compared with those of conventional InGaN/GaN QW LEDs using a GaN substrate. A strain-compensated QW structure is found to have much larger spontaneous emission than a InGaN/GaN QW structure...
We have studied the crystal orientation effect on optical anisotropy in InGaN/GaN quantum-well light-emitting diodes. The absolute value of the anisotropy is found to increase rapidly with increasing crystal angle.
Optically pumped THz emission has been observed in a wide range of semiconductors, and this process is an important practical source of pulsed THz radiation for time-domain THz spectroscopy and THz imaging. We show that InAs quantum dots on GaAs can be used to significantly enhance THz emission compared with a bare GaAs surface.
We present an integration technology for building active photonic devices on a silicon-on-insulator (SOI) based platform by using plasma assisted wafer bonding of III-V quantum wells to passive devices fabricated on SOI. Using this technique we have demonstrated an optically pumped silicon evanescent laser operating continuous wave (CW) up to 60degC. The lasers emit at 1.5 mum with a minimum threshold...
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