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A 4H-SiC MOSFET with breakdown voltage higher than 1200V has been successfully designed and fabricated. Numerical simulations have been performed to optimize the parameters of DMOSFET. The n-type epilayer is 10 μm thick with a doping of 6×1015 cm−3. The devices were fabricated with a floating guard ring edge termination. The drain current Id = 10 A at Vg = 20 V, corresponding to Vd = 2.0 V.
This paper presents the structural design, prototype development, and testing of high-voltage silicon carbide (SiC) trenched-and-implanted vertical JFETs. Key design factors including drift layer doping concentration and thickness, channel dimensions, and termination structures are studied with numerical simulations. Devices are then fabricated in our research level facilities. The fabricated device...
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