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Indium (In) doped zinc oxide (ZnO) nanowires-gated AlGaAs/GaAs high electron mobility transistor (HEMT) was demonstrated for the detection of lactic acid. The In-doped ZnO nanowires were synthesized via chemical vapor deposition (CVD) method. Such In-doped ZnO nanowires offered an effective surface area with high surface area-to-volume ratio as well as a favorable environment for the immobilization...
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