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This paper investigated the root cause of component fell-off from hand-held products after drop test. Failure modes are cracks at solder joints. Microstructure and fracture morphology of ENIG pad and solder joint were investigated through optical microscope (OM), scanning electron microscope (SEM), and energy dispersive spectrometer (EDS). The solder alloy used for assembly is SAC305 (SnAg3.0Cu0.5)...
An AlGaN/GaN high electron mobility transistor (HEMT) with tungsten nitride (WNx) Schottky gate fabricated on a sapphire substrate is presented. Gate forward current stress was chosen to evaluate the stability of the Schottky gate. After stress, this WNx HEMT remains stable, while the conventional Ni/Au HEMT shows performance degradation and failure. The maximum output power density from this device...
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