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In this paper, the operation and effects of radiation on Programmable Metallization Cells (PMC) memory and selector devices are analyzed and discussed. The Ag- or Cu-Ge30Se70 devices demonstrate non-volatile memory switching characteristics while the Ag- or Cu-SiO2 devices show a volatile threshold switching property. The impact of total ionizing dose from gamma-ray irradiation on both device types...
A superchip concept is introduced for realising Ultra Large Scale Integrated (ULSI) circuits which incorporate defect/fault tolerance and system reconfiguration. The central architectural component, a large crossbar switch matrix, is demonstrated in silicon. Hypothetical processor examples are illustrated utilising the superchip approach, and design/performance figures are discussed.
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