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We report here epitaxial growth of InGaN/GaN quantum wells (QWs) on suspended HfO2 photonic crystal structures by molecular beam epitaxy (MBE). Suspended HfO2 photonic crystals are achieved on silicon substrate by combining film evaporation, electron beam lithography, fast atom beam etching of HfO2 film with dry etching of silicon substrate. InGaN/GaN QWs are subsequently grown on suspended HfO2 photonic...
We report here the epitaxial growth of III‐nitride on the freestanding GaN nanostructures by molecular beam epitaxy growth. Various GaN nanostructures are defined by electron beam lithography and realized on GaN‐on‐silicon substrate by fast atom beam etching. Silicon substrate beneath GaN nanostructures is removed from the backside to form the freestanding GaN slab, and the epitaxial growth of III‐nitride...
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