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A mid-infrared optical upconverter fabricated by using wafer fusion technology is reported. The device integrates an InAsSb/GaSb photodetector with a GaAs/AlGaAs light emitting diode. Mid-infrared to near infrared optical upconversion was demonstrated with an external upconversion efficiency of 0.06 W/W at 200 K - a temperature attainable with a thermoelectric cooler.
This paper reviews our development effort in realizing and perfecting photon upconversion devices for wavelengths from 1.5 mum region to 0.87 mum. The basic idea is to integrate a 1.5-mum detector with a 0.87-mum light emitting diode (LED), connected in series. The detected photocurrent drives the LED, thereby achieving the upconversion. Various approaches of integration methods and device designs...
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