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Porous silicon layers are prepared by laser deposition in different low-pressure ambients. The specimens deposited under vacuum or the O 2 atmosphere have the main photoluminescence in the yellow and those deposited in H 2 have photoluminescence in the red region of wavelengths. The surface morphology and surface conductance of the specimens, investigated by scanning tunnelling microscopy,...
A method of preparing porous silicon films by laser ablation is reported. The targets used in this process were porous silicon layers obtained by normal electrolytic anodization of p-type Si wafers in a water and ethanol solution of HF. The substrate materials tested were gold layers sputtered on crystalline silicon and fused silica disks. Most experiments were done with a continuous wave Ar ion...
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