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In this paper, we present a systematic performance study and modeling of on-chip deep trench (DT) decoupling capacitors for high-performance SOI microprocessors. Based on system-level simulations, it is shown that the DT decoupling capacitors (decap) offer significant area advantage over the other two conventional decoupling capacitors - Metal-oxide-semiconductor (MOS) and Metal-Insulator-Metal (MIM)...
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