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Design of single-pole multiple-throw (SPMT) Tx/Rx switch for RF FEM for multi-mode multi-frequency smartphones is challenging. SPMTs in SOI CMOS show comparable specs to those in GaAs due to unique SOI properties [1-3]. Hand-held devices require high ESD protection with more parasitic capacitance (CESD) that can severely degrade RF IC specs [4-6]. We recently designed the first highly-linearity SP10T...
This paper reports the first 8kV+ ESD-protected SP10T transmit/receive (T/R) antenna switch for quad-band (0.85/0.9/1.8/1.9-GHz) GSM and multiple W-CDMA smartphones fabricated in an 180-nm SOI CMOS. A novel physics-based switch-ESD co-design methodology is applied to ensure full-chip optimization for a SP10T test chip and its ESD protection circuit simultaneously.
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