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The metallographically polished polycrystalline Sn surface was sputtered by 30kV focused Ga + ions at room temperature. The experiment was carried out using various FIB incidence angles (0°, 15°, 30°, and 45°) over a wide range of doses (10 16 –10 18 ions/cm 2 ). The surface morphology was carefully characterized under the optical microscope, scanning electron microscope...
The development, during annealing, of periodic one-dimensional ripple structure has been investigated. The nanoscale ripple array was fabricated on silicon(001) crystal surface using focused ion beam (FIB). Annealing was performed isothermally in a flowing argon gas ambient at 670 o C. The morphology of the ripple before and after annealing was analyzed by use of atomic force microscope. The...
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