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Photoemission electron microscopy (PEEM) has been applied to systems such as Fe, Cu, Ti and Zr on SiC substrates. The products on the surface that result from SiC decomposition and reaction with the deposited metal films can be well imaged by PEEM using synchrotron radiation, 40–130eV and a high-pressure Hg arc-discharge lamp as light sources. Although some PEEM systems have an energy filter, we have...
We have conducted photoemission electron microscope (PEEM) and Auger electron spectroscopy (AES) studies on the Cu(30 nm)/3C-SiC(100) and Cu(30 nm)/Si(100) samples annealed successively up to 850 o C. With PEEM, lateral diffusion of Cu atoms on the 3C-SiC substrate was observed at 400 o C while no lateral diffusion was seen for the Cu/Si(100) samples up to 850 o C. The 30 nm...
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