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In this paper, one of goals is to elucidate Vt behaviors of a top gate LTPS‐TFT fabricated on the PI substrate exposed to the negative bias temperature stress (NBTS), hot carrier injection (HCI) and breakdown voltage (BV). Physical and device characterization intend to comprehend the structural dependency of LTPS‐TFT on Vt stability and reliability in comparison to the glass substrate. It is found...
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