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We investigate surface morphology and electrical properties of VO2 films fabricated by direct thermal oxidation method. The VO2 film prepared with oxidation temperature at 580°C exhibits excellent qualities of VO2 characteristics, e.g. a metal-insulator transition (MIT) near 67°C, a resistivity ratio of ∼2.3×104, and a bandgap of 0.7eV. The analysis of surface morphology with electrical resistivity...
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