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We study the growth of Fe films on GaAs(100) at a low temperature, 140K, by in situ X-ray reflectivity (XRR) using synchrotron radiation. The XRR curves are well modeled by a single Fe layer on GaAs both at the growth temperature and after annealed at the room temperature. We found that the surface became progressively rougher during the growth with the growth exponent, β S =0.43±0.14. The...
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