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In this study, transparent p‐type indium–gallium (In–Ga) co‐doped SnO2 thin films were successfully prepared by spray pyrolysis. The first‐principles calculations were performed to determine the optimum In/Ga doping ratio. The crystal structures, electrical, and optical properties of In–Ga co‐doped SnO2 were investigated. X‐ray diffractometer analysis showed that In–Ga co‐doping can effectively decrease...
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