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An ultrahigh photocurrent (PC) signal which was about thousand times higher compared to the corresponding dark current was achieved in a two-dimensional (2D) multi-layer MoS2 field effect transistor (FET), owing to a gate-controlled MoS2/Ti/Au Schottky barrier (SB) modulation. The SBs can be enlarged for suppressing the electron drift along the channel in dark environment, and be reduced for the collection...
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