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The optimization of InGaN/GaN multiquantum wells structure based on Si-doped GaN substrate for λ~445 nm is performed. Advance simulation for a self-consistent laser model combined with band-structure and free-carrier gain calculations is employed to study effects such as waveguiding, carrier transport and heat flux. Enhancement in output power of the optimized structure is calculated. It...
Qualitative optimization of the InAlN as electron-block layer (EBL) has been studied. Analytical comparisons of AlGaN and modified InAlN as EBLs have been performed. Using 2D simulation, significant improvement in the emission intensity of the designed structures with In0.18Al0.82N EBLs compared to similar with non-EBL and Al0.8Ga0.82N as EBL is observed. This enhancement can be attributed to the...
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