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In this paper, the effects of aluminum (Al) layer and plasma oxidation on TiO2 based bipolar RRAM cell are investigated. The switching behaviors of the several cases in Ir/TiO2/Ir structure are compared with each other from the viewpoint of the effect of inserted Al layer and plasma oxidation time.
Resistive switching characteristics are investigated for NiO resistive switching random access memory (RRAM) by adapting cross-pointed structure. Uniform transition characteristics from high resistive state (HRS) to low resistive state (LRS) are very important to evaluate high reset/set ratio with low switching current. A cell which shows an irregular switching behavior in the initial transition has...
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