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Ga-doped ZnO (GZO) films with various thicknesses (105–490nm) were deposited on PET substrates at a low temperature of 90°C by a steered cathodic arc plasma evaporation (steered CAPE), and a GZO film with a thickness of 400nm was deposited at 90°C by a magnetron sputtering (MS) for comparison. The comparative analysis of the microstructure, residual stress, surface morphology, electrical and optical...
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