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A new large signal model construction technique is proposed in this paper. High order current- and charge-sources are used to describe the dispersive behavior of FETs, which are assembled from small signal measurement data. Instead of storing the model data into look-up tables, empirical functions and artificial neural network (ANN) are adopted to implement the model into simulators, which can reduce...
A hybrid parameter extraction method for GaAs/GaN HEMT modeling is proposed. The electromagnetic (EM) simulation is integrated to de-embed the coupling effects of the extrinsic passive part of the device. By analyzing the coefficient matrix of de-embedded Y-parameters with rearrangements, the intrinsic elements values of HEMTs' small-signal equivalent circuit can be solved uniquely from different...
A good large-signal model relies on the accurate small-signal parameter extraction. In order to get an accurate small signal model, the parasitic parameters must be de-embedded precisely. In this paper, an optimization based parasitic parameters extraction method is proposed. This method take the effect of asymmetrical channel structure at cold-FET condition into consideration.
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