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Patterning of materials at single nanometer resolution allows engineering of quantum confinement effects, as these effects are significant at these length scales, and yields direct control over electro‐optical properties. Silicon is by far the most important material in electronics, and the ability to fabricate Si‐based devices of the smallest dimensions for novel device engineering is highly desirable...
In article number 1903429, Vitor R. Manfrinato, Fernando E. Camino, and co‐workers achieve 1‐nm resolution Si patterning using aberration‐corrected electron‐beam lithography (AC‐EBL) and reactive ion etching, techniques compatible with Si technology processes, resulting in features with a line edge roughness of 1 nm. AC‐EBL is also used to tune the Si volume plasmon energy as a function of nanostructure...
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