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This paper presents a direct-analysis technique for transistors with a long-finger structure. The analysis technique is an incorporated simulation between the finite-difference time-domain electromagnetic (EM) and semiconductor device simulations. The co-simulation method can consider various EM couplings and phase shifts on finger electrodes of transistors. The method was applied for InGaP/GaAs HBTs...
This paper presents an integrated analysis of a FDTD electromagnetic field simulation and a device simulation applying for HBT's having long-finger structure. The SPICE model extracting device parameter was used instead of physical model. As a result, the FDTD simulation results were the same tendency to measurement results. Additionally the comparison of gold line with lossless line as finger was...
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