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This paper presents a direct-analysis technique for transistors with a long-finger structure. The analysis technique is an incorporated simulation between the finite-difference time-domain electromagnetic (EM) and semiconductor device simulations. The co-simulation method can consider various EM couplings and phase shifts on finger electrodes of transistors. The method was applied for InGaP/GaAs HBTs...
We investigated the thermal expansion properties of a component in order to develop a thermoelectric generating device using a Pb-Te system comprising PbTe doped with 0.5 wt%PbI2 and Pb0.5Sn0.5Te, which were selected for n- and p-type legs, respectively, and Ni and Fe, which were selected for the electrodes. [1] The dependence of the thermal expansion coefficient on the crystal grain size of the leg...
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