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A device-based health conditions monitoring and diagnosis method for inverters is present. In the inverter, SiCGTO (Gate-Turn-Off Thyristor) is considered as the key device to achieve pulse-width modulation. So the performance degradation of SiC-GTO device induced by interface-states is critical for the health conditions of inverters. In the research, key electrical parameters, including the forward...
The total ionizing dose response against the ray of 3-D silicon–oxide-nitride-oxide-nitride (SONOS) cells with a vertical polysilicon channel was investigated. No leakage current increase or subthreshold slope degradation is observed up to the total ionizing dose of 1 Mrad(Si) even for devices scaled down to 22 nm, as the gate-all-around structure provides better control over the potential...
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