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In order to mitigate the electric field crowdingingate dielectrics and solve the reliability issue, high dielectric constant (κ) materials such as Al2O3 was applied in SiC metal-oxide-semiconductor (MOS) capacitors. High quality thin film Al2O3 was deposited on 4H-SiC by thermal atomic layer deposition (ALD), followed by post deposition annealing (PDA). The PDA was conducted in oxygen atmosphere at...
The high reliability and long life characteristics of electronic products result in long degradation test time and low efficiency. Traditional degradation test depends on priori information and statistical analysis method is complex. In view of those problems, an evaluation method of step-down stress accelerated degradation modeling based on Gamma process is proposed. Firstly, the degradation path...
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