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We demonstrate that the single-layer graphene film can be directly grown on semiconductor SiGe substrate by using ambient pressure chemical vapor deposition. It is apparent that SiGe has a very strong catalytic ability for direct fabrication of high-quality graphene film. In comparison with various transition metal-based catalysts, this strategy can utilize the standard equipment available in semiconductor...
In contrast to the commonly employed chemical vapor deposition growth on nickel bulk that leads to multilayer graphene formation by carbon segregation, we present an approach to synthesize high quality graphene on Ni through carbon ion implantation and post annealing. Through tuning the dose of carbon ions with the aid of ion beam technology, followed by high-temperature annealing and fast cooling...
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