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In this paper, an improved radio-frequency (RF) noise model is extended for silicon germanium (SiGe) heterojunction bipolar transistors (HBTs) by applying RF avalanche delay mechanism to investigate noise performance in the breakdown region where reliability is a concern. The impact of inductive feedback due to base–collector (BC) junction avalanche breakdown on noise performance is analyzed and explained...
A negative impedance is used to enable distortion cancellation between the transconductor and the cascode transistor for LNAs with a cascode topology. As a proof of concept, a resistive feedback LNA using this IM3 cancellation technique in a standard 0.16µm CMOS process shows that for 0.1GHz to 1GHz, improvements of 6.3dB to 10dB for IIP3 and 0.2dB to 1dB for gain are achieved without noise degradation...
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