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In this paper, we explore the quantitative investigation of the high-frequency performance of gate electrode workfunction engineered (GEWE) silicon nanowire (SiNW) MOSFET and compared with silicon nanowire MOSFET(SiNW MOSFET) using device simulators: ATLAS and DEVEDIT 3D. Simulation results demonstrate the improved RF performance exhibited by GEWE-SiNW MOSFET over SiNW MOSFET in terms of transconductance...
In this paper, we investigate the impact of gate length and channel doping of GEWE-SiNW MOSFET on the small signal behavior in terms of S-parameters such as reflection and transmission coefficients at 100Hz-4THz frequency range using device simulators: ATLAS and DEVEDIT-3D. The main aim of this work is to optimize the values of gate length and channel doping that will be projected for future reference...
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