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4H-SiC DMOSFETs designed to conduct up to 20 A and block in excess of 1200 V are described, and a performance comparison with comparably rated Si MOSFETs and IGBTs is presented. The 4H-SiC DMOSFETs show comparable to slightly improved on-state losses compared to the Si IGBTs and significantly improved performance over the Si MOSFET. Leakage currents of the 4H-SiC DMOSFETs are two orders of magnitude...
Recent dramatic advances in the development of large area silicon carbide (SiC) MOSFETs along with their companion JBS diode technology make it possible to design and fabricate high power SiC switch modules. An effort underway by the Air Force Research Laboratory has lead to the development of a 1.2 kV/100 A SiC dual switch power module capable of operating at a junction temperature of 200degC. Two...
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