The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
4H-SiC DMOSFETs designed to conduct up to 20 A and block in excess of 1200 V are described, and a performance comparison with comparably rated Si MOSFETs and IGBTs is presented. The 4H-SiC DMOSFETs show comparable to slightly improved on-state losses compared to the Si IGBTs and significantly improved performance over the Si MOSFET. Leakage currents of the 4H-SiC DMOSFETs are two orders of magnitude...
This paper discusses the recent progress in large area silicon carbide (SiC) DMOSFETs and junction barrier Schottky (JBS) diodes. 1.2 kV and 10 kV SiC DMOSFETs have been produced with die areas greater than 0.64 cm2. SiC JBS diode dies also rated at 1.2 kV and 10 kV have been produced with die areas exceeding 1.5 cm2. These results demonstrate that SiC power devices provide a significant leap forward...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.