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In this paper the tuning of the n-metal effective work function by implantation of lanthanum is demonstrated. The effect of implantation and thermal annealing on the device flat-band voltage is presented. It is shown that lanthanum doping of the gate stack produces a negative shift of the flat-band voltage of −0.53 V for a lanthanum does of 5×10 14 cm −2 , after the device undergoes...
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