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It has been theoretically predicted that 1.9% biaxial tensile strain can convert Ge [1], which is compatible with Si CMOS technology, into a direct band-gap semiconductor, making it a candidate material for light sources on Si [2, 3]. Combining the advantage of tensile strain with quantum dot (QD), we proposed that tensile-strained QD is a new route toward light emission from Ge [4]. In this work,...
Electrothermal effects in through silicon via (TSV) interconnects are investigated in this paper. The temperature-dependent TSV capacitance is calculated with MOS effect in silicon substrate considered. The per-unit-length resistance and inductance of TSV arrays made of different filling materials are extracted numerically with the partial-element equivalent-circuit (PEEC) method, and insertion losses...
Proposed uses of solid-state thermoelectric microcoolers for hot spot remediation have included the formation of a superlattice layer on the back of the microprocessor chip, but there have been few studies on the cooling performance of such devices. This paper provides the results of 3-D, electrothermal, finite element modeling of a superlattice microcooler, focusing on the hot spot temperature and...
Multi-physics characterization of multi-layered stacked through silicon vias (TSVs) is performed based on the hybrid time-domain finite element method (FEM), with most temperature-dependent material parameters treated appropriately. Using our developed algorithm, numerical computation is carried out so as to capture transient electro-thermo-mechanical responses of different TSV geometries injected...
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