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The formation conditions of the Pt/WOx/SiC thin-film system on a silicon carbide (6H-SiC) single crystal are optimized. The prepared system possesses stable characteristics and makes it possible to effectively record hydrogen at low concentrations in air at a temperature of ∼350°C, as well as to hold hydrogen in the WOx lattice at room temperature for a long time. The voltage shift of reverse...
The results of a comparative study of the electrical properties of gas-sensitive semiconductor structures grown by the pulsed laser deposition of platinum, platinum ion implantation, and a combined method of platinum implantation and deposition onto an n-6H-SiC substrate are presented. Double-layer structures show a stronger response to hydrogen gas with a more pronounced diode behavior of the currentvoltage...
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