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InAs epilayers with thicknesses of 400, 500, 750, and 1500nm were grown on GaAs by molecular beam epitaxy and their properties were investigated by reflection high-energy electron diffraction and photoluminescence (PL). For all InAs epilayers, the PL peak position measured at 10K is blue-shifted from that of bulk InAs, which could be largely due to the residual strain in the epilayer. InAs epilayers...
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