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We used photoluminescence (PL), photoreflectance (PR) spectroscopy and transmission electron microscopy (TEM) to investigate the effects of high potential barriers on the optical and structural characteristic of InAs quantum dots (QDs). A sample with regular InAs QDs on GaAs was grown as a reference using molecular beam epitaxy. Another InAs QD sample was embedded in a single AlGaAs barrier. A sample...
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