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Ni 80 Fe 20 /Ni 48 Fe 12 Gr 40 bilayer films and Ni 80 Fe 20 monolayer films were deposited at room temperature on SiO 2 /Si(100) substrates by electron beam evaporation. The influence of the thickness of the Ni 48 Fe 12 Cr 40 underlayer on the structure, magnetization, and magnetoresistance of the Ni 80 ...
Ni 48 Fe 12 Cr 40 (7nm)/Ni 80 Fe 20 (40nm) bilayer films and Ni 80 Fe 20 (40nm) monolayer films were deposited at ambient temperature on Si(100)/SiO 2 substrates by electron beam evaporation. The effect of annealing on the structure, composition, magnetization and magnetoresistance of the Ni 48 Fe 12 Cr 40 /Ni...
240nm-thick Ni 49 Fe 51 films were sputter deposited on SiO 2 /Si(100) substrates at room temperature and then annealed in vacuum at 300, 400 and 480°C for 1h, respectively. Structural, electrical and magnetic properties of the films were investigated using X-ray diffraction (XRD), field emission scanning electron microscopy (FE-SEM), four-point probe technique and a vibrating...
Ni x Fe 100-x films with a thickness of about 200nm were deposited on SiO 2 /Si(100) substrates at room temperature by DC magnetron co-sputtering using both Fe and Ni 80 Fe 20 targets. Compositional, structural, electrical and magnetic properties of the films were investigated. Ni 76 Fe 24 , Ni 6 ...
Au layers with thickness of about 110nm were sputter-deposited on unheated glass substrates coated with a Cr layer about 20nm thick. The chamber was evacuated to a pressure of 2Pa and then sputtering was carried out at Ar pressure of 4Pa. The Au/Cr bilayer films were annealed in a vacuum of 5x10 -4 Pa at 170 o C, 180 o C, 200 o C and 250 o C for from 5...
Cu films with thicknesses of 290-350nm were deposited on glass substrates without heating by DC magnetron sputtering in pure Ar gas. Ar pressure was maintained in 0.5, 1.0 and 1.5Pa, respectively. The target voltage was fixed at 400V, but the target current increased from 69 to 200mA with increasing Ar pressure. X-ray diffraction, scanning electron microscopy and atomic force microscopy were used...
Aluminium films with thicknesses of 30-650 nm were deposited on unheated glass substrates by electron beam evaporation. The deposition rate was controlled at 10 and 33 nm/min, respectively. The structural, impure and electrical properties of aluminium films were studied by using atomic force microscopy, Auger electron spectroscopy and by measuring resistivity. The grain size of aluminium film apparently...
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